MET5

The MET5 is a 0.5-NA EUV (13.5 nm) projection lithography tool located at the Advanced Light Source. With a unique lossless programmable coherence illuminator that enables world-leading 8 nm half-pitch imaging resolution, the MET5 serves as the primary experimental platform for photoresist evaluation, stochastic defect studies, and EUV imaging research at CXRO. For a new lithography technology to succeed, the supporting ecosystem must be developed years in advance; the MET5 gives researchers from around the world that essential early learning in resists, processing, and masks.

Virtual Tour

Explore the MET5 cleanroom and tool in 3D with this interactive Matterport virtual tour.

MET Users Portal

Access scheduling, documentation, and resources for MET5 users at met.lbl.gov

Instrument Specifications

Source	13.5 nm (EUV), ALS BL 12.0.1.4 or Energetiq EQ-10 Z-pinch
Optics	0.5-NA isomorphic Schwarzschild optic
Resolution	8 nm (1-D); 11 nm (2-D)
Field Size	200 × 30 μm
Illumination	Programmable illumination, F2X (pseudo-PS)
Throughput	4–5 wafers per shift
Operating Schedule	10 eight-hour shifts per week
Wafer Format	200-mm wafers or 2″ × 2″ coupons

Key Capabilities

Photoresist Evaluation

The MET prints high-resolution patterns in candidate photoresists, enabling characterization of sensitivity, resolution, LER, and stochastic defect rates under realistic EUV imaging conditions.

SEM image of anisotropic three-dimensional line-edge roughness — 3D SEM of typical resist line-edge roughness (LER), a key factor in EUV process yield.

Resolution Leadership

The MET5’s 0.5-NA optic and programmable coherence illuminator reach down to 8 nm half-pitch resolution, giving researchers an unparalleled view into the future of photolithography. Materials researchers have used the MET5 to develop photoresists capable of sub-10 nm dense patterning using conventional lithography.